Luminescence studies of amorphous AIN incorporated with pure Cu, Mn, or Cr
and codeposited with (Cu, Th, Mn) were performed at 300 K. Thin films of Cu
, Mn, and Cr amorphous A1N, similar to 200 nm thick, were grown on p-Si(111
) substrates using rf magnetron sputtering in a nitrogen atmosphere. Cathod
oluminescence showed that pure Cu incorporated amorphous AIN films have str
ong emission in the blue (similar to 420 nm) and Mn and Cr incorporated fil
ms luminescence in the red (similar to 690 nm). Cr3+ emission is likely mor
e intense than Mn4+ because chromium does not suffer from incomplete charge
compensation in the III-V semiconductor. Luminescence studies of layered s
tructures where pure Cu incorporated films are grown on top of pure Cr inco
rporated films reveal emission from both Cr and Cu ions. The migration of C
r ions during the 1000 degreesC luminescence activation step is confirmed w
ith secondary ion mass spectrometry depth profiling. Co-deposited films of
Cu, Th, and Mn show Cu emission around 530 nm instead of 420 nm due to coac
tivation by Mn. (C) 2001 American Vacuum Society.