Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr

Citation
Al. Martin et al., Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr, J VAC SCI A, 19(4), 2001, pp. 1894-1897
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
4
Year of publication
2001
Part
2
Pages
1894 - 1897
Database
ISI
SICI code
0734-2101(200107/08)19:4<1894:VEFAAT>2.0.ZU;2-M
Abstract
Luminescence studies of amorphous AIN incorporated with pure Cu, Mn, or Cr and codeposited with (Cu, Th, Mn) were performed at 300 K. Thin films of Cu , Mn, and Cr amorphous A1N, similar to 200 nm thick, were grown on p-Si(111 ) substrates using rf magnetron sputtering in a nitrogen atmosphere. Cathod oluminescence showed that pure Cu incorporated amorphous AIN films have str ong emission in the blue (similar to 420 nm) and Mn and Cr incorporated fil ms luminescence in the red (similar to 690 nm). Cr3+ emission is likely mor e intense than Mn4+ because chromium does not suffer from incomplete charge compensation in the III-V semiconductor. Luminescence studies of layered s tructures where pure Cu incorporated films are grown on top of pure Cr inco rporated films reveal emission from both Cr and Cu ions. The migration of C r ions during the 1000 degreesC luminescence activation step is confirmed w ith secondary ion mass spectrometry depth profiling. Co-deposited films of Cu, Th, and Mn show Cu emission around 530 nm instead of 420 nm due to coac tivation by Mn. (C) 2001 American Vacuum Society.