Cluster deposition study by molecular dynamics simulation: Al and Cu cluster

Citation
Jw. Kang et al., Cluster deposition study by molecular dynamics simulation: Al and Cu cluster, J VAC SCI A, 19(4), 2001, pp. 1902-1906
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
4
Year of publication
2001
Part
2
Pages
1902 - 1906
Database
ISI
SICI code
0734-2101(200107/08)19:4<1902:CDSBMD>2.0.ZU;2-I
Abstract
The ionized cluster beam deposition of Al and Cu clusters has been investig ated with a classical molecular dynamics simulation and the Metropolis Mont e-Carlo simulation. The spreading of the cluster has been studied as functi ons of cluster size and initial cluster energy. When the local area reached the local melting spot on the surface around the impact point of an energe tic cluster, during a few ps. intermixing was easily achieved and a good ep itaxial film with optimum bulk density was formed. For uniform film growth using a cluster impact, it is necessary to make the local area temperature higher than melting temperature on the surface around the impact point of a n energetic cluster. (C) 2001 American Vacuum Society.