Atomic-order thermal nitridation of Si(100) and subsequent growth of Si

Atomic-order nitridation by NH3 on Si(100) and subsequent Si growth by SiH4 were investigated using an ultraclean low-pressure chemical vapor depositi on system with a Xe flash lamp. In thermal nitridation on Si(100), it is fo und that nitridation occurs even at 260 degreesC with flash heating, and th e N atom concentration tends to saturate to about 2.4 X 10(15) cm(-2). In S i deposition on the ultrathin Si nitride, it is found that N desorption fro m the Si nitride films hardly occurs, and Si grew on Si nitride at 385 degr eesC in an SiH4 environment with and without the flash lamp light irradiati on. An incubation period of Si growth is observed and increases with increa sing N atom concentration of the Si nitride film. On Si with N atom concent ration of about 2 X 10(14) cm(-2), the incubation period is hardly observed and the reflection high energy electron diffraction patterns indicates tha t Si epitaxially grew. Layer-by-layer growth control of Si nitride is propo sed by combining atomic-order nitridation on Si and atomic-layer growth of Si on the Si nitride. (C) 2001 American Vacuum Society.