Chlorosilane adsorption on clean Si surfaces: Scanning tunneling microscopy and Fourier-transform infrared absorption spectroscopy studies

Authors
Nishizawa, M Yasuda, T Yamasaki, S Shinohara, M Kamakura, N Kimura, Y Niwano, M
Citation
M. Nishizawa et al., Chlorosilane adsorption on clean Si surfaces: Scanning tunneling microscopy and Fourier-transform infrared absorption spectroscopy studies, J VAC SCI A, 19(4), 2001, pp. 2001-2006
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
4
Year of publication
2001
Part
2
Pages
2001 - 2006
Database
ISI
SICI code
0734-2101(200107/08)19:4<2001:CAOCSS>2.0.ZU;2-L
Abstract
The initial adsorption processes of SiH2Cl2 on Si(111)-(7X7) and Si(100)-(2 X1) surfaces have been investigated by using infrared absorption spectrosco py and scanning tunneling microscopy. We have found that dissociation react ions of SiH2Cl2 on these two surfaces are distinctively different, SiH2Cl2 adsorption on Si(111)-(7X7) takes place via Si-Cl bond breakage, while both Si-H and Si-CI bonds of the SiH2Cl2 molecules are dissociated on Si(100)-( 2x1). (C) 2001 American Vacuum Society.