Photovoltaic characteristics of BR/p-silicon heterostructures using surface photovoltage spectroscopy

Citation
Ls. Li et al., Photovoltaic characteristics of BR/p-silicon heterostructures using surface photovoltage spectroscopy, J VAC SCI A, 19(4), 2001, pp. 1037-1041
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
4
Year of publication
2001
Part
1
Pages
1037 - 1041
Database
ISI
SICI code
0734-2101(200107/08)19:4<1037:PCOBHU>2.0.ZU;2-Z
Abstract
Purple membrane (PM) monolayers were deposited on hydrophilic or hydrophobi c silicon substrates through the Langmuir-Blodgett LB) technique. The photo voltaic features and interfacial charge separation of p-Si/PM/indium tin ox ide (ITO) heterostructure were studied by surface photovoltage spectroscopy ASPS). The different photovoltaic response values were obtained due to the nonrandom orientation of PM in the LB films on the hydrophilic versus hydr ophobic silicon substrates. The photovoltaic response value versus external potential of the p-Si/cytoplasmic-extracellular/ITO heterostructure showed an obviously rectifying behavior. Compared with the p-Si/ITO heterostructu re, the response value of SPS increased more rapidly in the case of the pos itive external bias. (C) 2001 American Vacuum Society.