High rate sputtering for Ni films by an rf-dc coupled magnetron sputteringsystem with multipolar magnetic plasma confinement

Ni films were prepared by an rf-dc coupled magnetron sputtering with multip olar magnetic plasma confinement (MMPC) at the low pressure of 6.7 X 10(-2) Pa and at the long distance of 120 rum, when permanent magnets were placed around a nickel target (200 mm phi, 5 mm thick) outside the chamber. When rf power and dc bias voltages were applied simultaneously to the target, th e deposition rate of the Ni films significantly increased with the target d c bias voltage (VT). The highest value of the deposition rate was about 250 nm/min at V-T = -820 V. The high rate sputtering for Ni films was possible at the low Ar gas pressure of 6.7 x 10(-2) Pa. The resistivity for all the films deposited at different dc bias voltages was 7.1-8.2 mu Omega cm whos e value was close to the bulk value. It is shown that the sputtering system with MMPC has some advantages in comparison with conventional magnetron sp uttering, such as high deposition rate, plasma discharge stability, and the preparation of high quality magnetic thin films. (C) 2001 American Vacuum Society.