Formation of Al3Ta by Ta ion implantation into aluminum using a metal vapor vacuum arc ion source

Authors
Wei, M Kun, T Liu, XT Liu, BX
Citation
M. Wei et al., Formation of Al3Ta by Ta ion implantation into aluminum using a metal vapor vacuum arc ion source, MATER RES B, 36(10), 2001, pp. 1759-1766
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS RESEARCH BULLETIN
ISSN journal
00255408 → ACNP
Volume
36
Issue
10
Year of publication
2001
Pages
1759 - 1766
Database
ISI
SICI code
0025-5408(20010901)36:10<1759:FOABTI>2.0.ZU;2-H
Abstract
The intermetallic compound Al3Ta was directly formed by Ta ion implantation into aluminum with a current density of 64 muA/cm(2) using a metal vapor v acuum arc ion source at a dose of 3 X 10(17) ions/cm(2). With increasing Ta ion dose, the content of the Al3Ta phase increased. At a dose of 7 X 10(17 ) ions/cm(2), the Ta-aluminide layer was about 350 nm thick. The aluminide layer played a significant role in enhancing the surface hardness of the Al matrix. (C) 2001 Elsevier Science Ltd. All rights reserved.