Statistics of the domain-boundary relocation time in semiconductor superlattices - art. no. 041308

Static domain formation in doped semiconductor superlattices results in sev eral current branches separated by abrupt discontinuities that exhibit hyst eresis. The transition from one branch to its adjacent one is studied by ti me-resolved switching experiments. The mean value of the relocation time in creases by more than one order of magnitude. when the final voltage on the adjacent branch is reduced to a value approaching the discontinuity. At the same time. the distribution function of the relocation time changes from a simple Gaussian to a first-passage time form.