Citation
Ms. Daw et al., Effect of stress on dopant and defect diffusion in Si: A general treatment- art. no. 045205, PHYS REV B, 6404(4), 2001, pp. 5205
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829
→ ACNP
Volume
6404
Issue
4
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010715)6404:4<5205:EOSODA>2.0.ZU;2-5
Abstract
We present a theoretical treatment of the effect of stress on dopant and de
fect diffusion in Si. A prior treatment [P. H. Dederichs and K. Schroeder,
Phys. Rev. B 17, 2524 (1978)] of vacancy diffusion in strained fcc metals i
s extended to include more general defects and crystallinity. The new metho
d is applied to two examples in Si: (1) a vacancy, including Jahn-Teller di
stortions, and (2) a B-I pair. Both are predicted to show isotropic diffusi
on for (100) grown uniaxially strained film, but strong anisotropic diffusi
on for (111) films.