Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN - art. no. 045213

Authors
Arnaudov, B Paskova, T Goldys, EM Evtimova, S Monemar, B
Citation
B. Arnaudov et al., Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN - art. no. 045213, PHYS REV B, 6404(4), 2001, pp. 5213
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6404
Issue
4
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010715)6404:4<5213:MOTFRB>2.0.ZU;2-5
Abstract
We simulate the spectral distribution of the free-electron recombination ba nd in optical emission spectra of GaN with a free-carrier concentration in the range of 5 x 10(17)-1 x 10(20) cm(-3). The influence of several factors , such as nonparabolicity, electron-electron interaction. and electron-impu rity interaction on both the spectral and energy position and the effective gap narrowing are taken into account. The calculated properties of the fre e-electron-related emission bands are used to interpret the experimental ph otoluminescence and cathodoluminescence spectra of GaN epitaxial layers.