Temperature-induced reversible phase transition of a Si(113) surface - art. no. 045305

Authors
Hwang, CC Kim, HS Kim, YK Ihm, KW Park, CY An, KS Kim, KJ Kang, TH Kim, B
Citation
Cc. Hwang et al., Temperature-induced reversible phase transition of a Si(113) surface - art. no. 045305, PHYS REV B, 6404(4), 2001, pp. 5305
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6404
Issue
4
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010715)6404:4<5305:TRPTOA>2.0.ZU;2-V
Abstract
The structural phase transition (PT) of the Si(113) surface upon varying th e temperature has been investigated using synchrotron radiation photoemissi on spectroscopy (SRPES). It was observed that the Si(113) surface reconstru cts to a 3 x 2 phase at room temperature (RT). The 3 x 2 surface was found to transform to 3 x 1 at about 800 K. Our PES results show that the local s tructure of the 3 x 2 surface at RT is the same as that of the 3 x 1 surfac e at 800 K. The PT upon raising the temperature can be understood via the t hermal fluctuation of two types of tetramer on the 3 x 2 surface. We thus p ropose that the temperature-induced PT is an order-disorder transition.