Third-order exciton-correlation and nonlinear cavity-polariton effects in semiconductor microcavities - art. no. 045316

Citation
Nh. Kwong et al., Third-order exciton-correlation and nonlinear cavity-polariton effects in semiconductor microcavities - art. no. 045316, PHYS REV B, 6404(4), 2001, pp. 5316
Citations number
68
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6404
Issue
4
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010715)6404:4<5316:TEANCE>2.0.ZU;2-P
Abstract
We present a microscopic theory of the coherent third-order (chi ((3))) opt ical response of semiconductor quantum well microcavities, specialized to t he four-wave-mixing configuration in the spectral vicinity of the lowest ex citon frequency. The theory is that of a quantum-mechanical many-electron s ystem dipole coupled to a classical radiation field. The many-electron dyna mics is treated within the dynamics-controlled-truncation formalism restric ted to the Is-exciton subspace. Within this limitation, all Coulomb correla tion effects are included, resulting in an effective theory of (virtual) ex citon-polariton scattering. Good quantitative agreement of the theory is ob tained in comparison to the experiments reported by Gonokami et al., Phys. Rev. Lett. 79, 1341 (1997). This comparison reveals the signatures of both the bound biexciton and the exciton-exciton scattering (continuum) correlat ions. Furthermore. a proper calculation of the scattering correlations is s hown to be important; each of two common approximations, the Markov and the second Born, results in clear discrepancies from the data.