Confinement-enhanced electron transport across a metal-semiconductor interface - art. no. 056801

Authors
Altfeder, IB Golovchenko, JA Narayanamurti, V
Citation
Ib. Altfeder et al., Confinement-enhanced electron transport across a metal-semiconductor interface - art. no. 056801, PHYS REV L, 8705(5), 2001, pp. 6801
Citations number
23
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
8705
Issue
5
Year of publication
2001
Database
ISI
SICI code
0031-9007(20010730)8705:5<6801:CETAAM>2.0.ZU;2-L
Abstract
We present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb/Si(1 11) interface. Experiments with a self-assembled Pb nanoscale wedge reveal the phenomenon of confinement-enhanced interfacial transport: a proportiona l increase of the electron injection rate into the semiconductor with the f requency of electron oscillations in the Pb quantum well.