Preparation and properties of isotopically pure polycrystalline silicon

Authors
Godisov, ON Kaliteevskii, AK Korolev, VI Ber, BY Davydov, VY Kaliteevskii, MA Kop'ev, PS
Citation
On. Godisov et al., Preparation and properties of isotopically pure polycrystalline silicon, SEMICONDUCT, 35(8), 2001, pp. 877-879
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
8
Year of publication
2001
Pages
877 - 879
Database
ISI
SICI code
1063-7826(2001)35:8<877:PAPOIP>2.0.ZU;2-X
Abstract
A method for extracting silicon isotopes was developed. Polycrystalline Si- 28, Si-29, and Si-30 samples isotopically enriched to 99.95, 99.5, and 99.9 %, respectively, were prepared. Energies of optical phonons in the isotopic ally pure samples show the expected dependence on the average atomic mass. (C) 2001 MAIK "Nauka/Interperiodica".