Electrical properties of CdxHg1-xTe/CdZnTe heterostructures

Authors
Belov, AG Belogorokhov, AI Lakeenkov, VM
Citation
Ag. Belov et al., Electrical properties of CdxHg1-xTe/CdZnTe heterostructures, SEMICONDUCT, 35(8), 2001, pp. 880-882
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
8
Year of publication
2001
Pages
880 - 882
Database
ISI
SICI code
1063-7826(2001)35:8<880:EPOCH>2.0.ZU;2-#
Abstract
Specific features of the electrical properties of p-type CdxHg1 - xTe/CdZnT e heterostructures have been studied at liquid-nitrogen temperatures. The a dopted theoretical model satisfactorily describes the obtained experimental data. Errors in determining the concentration and mobility of heavy holes- arising when contributions to the electrical parameters from electrons and light holes are disregarded-are evaluated. (C) 2001 MAIK "Nauka/Interperiod ica".