Effect of temperature on photoconductivity and its decay in microcrystalline silicon

The effect of temperature on steady-state photoconductivity and its relaxat ion after illumination cut-off in lightly boron-doped microcrystalline hydr ogenated silicon films has been studied. The measurements were performed in the temperature range 150-430 K with an incident photon energy of 1.4 eV. The temperature dependences of the photoresponse time and drift mobility in microcrystalline silicon have been obtained from the data on the steady-st ate photoconductivity and its decay. Mechanisms of carrier transport and re combination that governing these temperature dependences are discussed. (C) 2001 MAIK "Nauka/Interperiodica".