X-ray spectroscopic study of electronic structure of amorphous silicon andsilicyne

Citation
Ai. Mashin et al., X-ray spectroscopic study of electronic structure of amorphous silicon andsilicyne, SEMICONDUCT, 35(8), 2001, pp. 956-961
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
8
Year of publication
2001
Pages
956 - 961
Database
ISI
SICI code
1063-7826(2001)35:8<956:XSSOES>2.0.ZU;2-6
Abstract
X-ray and ultrasoft X-ray spectroscopy have both been applied to study SiKb eta and SiL23 emission spectra of crystalline silicon (c-Si), amorphous hyd rogenated silicon (a-Si:H), and silicyne (a new allotropic linear-chain for m of silicon). SiL23 spectra of silicyne show three peaks instead of two ob served in crystalline and amorphous silicon. The third peak lies in the hig h-energy range at 95.7 eV, its intensity constituting similar to 75% of tha t of the main peak. An additional peak is also observed in the short-wavele ngth part of the SiKbeta spectrum. Such a significant difference in shape b etween the X-ray spectra of amorphous silicon and silicyne is attributed to the existence of a pronounced pi component in the chemical bonds between s ilicon atoms in silicyne. (C) 2001 MAIK "Nauka/Interperiodica".