Threshold characteristics of lambda=1.55 mu m InGaAsP/InP heterolasers

Authors
Zegrya, GG Pikhtin, NA Skrynnikov, GV Slipchenko, SO Tarasov, IS
Citation
Gg. Zegrya et al., Threshold characteristics of lambda=1.55 mu m InGaAsP/InP heterolasers, SEMICONDUCT, 35(8), 2001, pp. 962-969
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
8
Year of publication
2001
Pages
962 - 969
Database
ISI
SICI code
1063-7826(2001)35:8<962:TCOLMM>2.0.ZU;2-8
Abstract
Temperature dependences of the threshold characteristics of InGaAsP/InP qua ntum well (QW) lasers have been studied. The main contribution to the thres hold current is made by the thresholdless Auger recombination. The observed power-law temperature dependence of the threshold current is explained by the predominance of the thresholdless Auger recombination in QWs over the t hreshold Auger process. (C) 2001 MAIK "Nauka/Interperiodica".