The optical properties of crystalline silicon in the IR spectral range have
been used for the realisation of a grating type microspectrometer. An alum
inium metallisation on a double side polished silicon wafer is used for fab
rication of the multi-slit gratings. The dispersed spectrum propagates thro
ugh this silicon wafer and is projected on an array of polysilicon thermopi
les, integrated in a second bulk micromachined silicon wafer. The two wafer
s are bonded at low temperature. An IR spectrometer results, which is simpl
e to fabricated and remains compatible with standard IC processing. (C) 200
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