ITO/SiOx/Si optical sensor with internal gain

A visible/near-infrared optical sensor based on an ITO/SiOx/n-Si structure with internal gain is presented. This surface-barrier structure was fabrica ted by a low-temperature processing technique. The interface properties and carder transport were investigated from dark current-voltage and capacitan ce-voltage characteristics. Examination of the multiplication properties wa s performed under different light excitation and reverse bias conditions. T he spectral and pulse response characteristics are analysed. The current am plification mechanism is interpreted by the control of electron current by the space charge of photogenerated holes near the SiOx/Si interface. The op tical sensor output characteristics and some possible device applications a re presented. (C) 2001 Elsevier Science B.V. All rights reserved.