Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications

Authors
Boltovets, NS Kholevchuk, VV Konakova, RV Mitin, VF Venger, EF
Citation
Ns. Boltovets et al., Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications, SENS ACTU-A, 92(1-3), 2001, pp. 191-196
Citations number
12
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
09244247 → ACNP
Volume
92
Issue
1-3
Year of publication
2001
Pages
191 - 196
Database
ISI
SICI code
0924-4247(20010801)92:1-3<191:GRASDT>2.0.ZU;2-G
Abstract
New types of miniature (1.2 nun diameter x 1.0 mm. long) temperature sensor s based on germanium (Ge) films and silicon diodes have been developed and produced. The Ge-filin microthermometers are intended for use at temperatur es from 1 to 400 K, and silicon microdiodes cover operating temperature ran ge from 2 to 600 K. The designs of sensitive elements and miniature package as well as sensor characteristics are presented. (C) 2001 Elsevier Science B.V. All rights reserved.