A low-voltage torsional actuator for application in RF-microswitches

This paper reports a new surface micromachined torsional actuator for integ rated microswitches. The device requires an actuation voltage below 10 V an d is fabricated in a BiCMOS compatible process, allowing for monolithic int egration with an actuation circuitry. Insensitivity against mechanical vibr ations is achieved by a bistable operation principle. Measured pull-in volt ages of the structures are in good agreement with the electromechanical sim ulations. The dynamic behavior of the actuator is investigated by interfero metric determination of the resonance modes. Measurements of the switching times of completed devices result in values below 10 mus. (C) 2001 Elsevier Science B.V. All rights reserved.