Macroporous-based micromachining on full wafers

This paper reports on a technique of macroporous-based micromachining for f ull wafers. A 3.6 kW xenon lamp of whose intensity can be varied is employe d to generate electronic holes during the etching. In order to apply a unif orm electric field to whole 3 in. wafer, a mesh electrode is formed on the backside of the wafer after implantation of an n(+) layer. Furthermore, a s urfactant is added to an electrolyte to remove hydrogen bubbles from the wa fer surface and the etched holes. These methods improve the uniformity of t he etched structures. This shows that electrochemical etching can be used n ot only in the laboratory but also in manufacturing processes. (C) 2001 Els evier Science B.V. All rights reserved.