Applications of II-VI diluted magnetic semiconductors for magneto-electronics

Authors
Ferrand, D Wasiela, A Tatarenko, S Cibert, J Richter, G Grabs, P Schmidt, G Molenkamp, LW Dietl, T
Citation
D. Ferrand et al., Applications of II-VI diluted magnetic semiconductors for magneto-electronics, SOL ST COMM, 119(4-5), 2001, pp. 237-244
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
119
Issue
4-5
Year of publication
2001
Pages
237 - 244
Database
ISI
SICI code
0038-1098(2001)119:4-5<237:AOIDMS>2.0.ZU;2-N
Abstract
The discovery of carrier induced ferromagnetism in p-type doped diluted mag netic semiconductors (DMS) with Curie temperatures actually up to 110 K in Ga1-xMnxAs, as well as the demonstration of high spin injection efficiency observed from II-VI and III-V DMS [1,2] have recently renewed strongly the interest in DMS. In this paper, we present an overview of the recent experi ments we have pet-formed on spin injection light emitting diodes using an n -type doped II-VI DMS layer as spin aligner and on p-type doped II-VI magne tic heterostructures: Cd1-xMnxTe quantum wells and Zn1-xMnxTe epilayers. (C ) 2001 Elsevier Science Ltd. All rights reserved.