Generation and accumulation of dislocations on the silicon surface under the action of pulse-periodic emission from a YAG : Nd laser

Authors
Banishev, AF Golubev, VS Kremnev, AY
Citation
Af. Banishev et al., Generation and accumulation of dislocations on the silicon surface under the action of pulse-periodic emission from a YAG : Nd laser, TECH PHYS, 46(8), 2001, pp. 962-967
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS
ISSN journal
10637842 → ACNP
Volume
46
Issue
8
Year of publication
2001
Pages
962 - 967
Database
ISI
SICI code
1063-7842(2001)46:8<962:GAAODO>2.0.ZU;2-T
Abstract
Solid-phase damage of the silicon surface due to the generation and accumul ation of dislocations is studied. The dislocations are generated under the pulse-periodic action of a YAG : Nd laser. The number of laser pulses that causes surface damage vs. power density and pulse repetition period is deri ved. A mechanism responsible for the generation and accumulation of the dis locations at the surface is suggested. (C) 2001 MAIK "Nauka/ Interperiodica ".