Based on X-ray photoelectron spectrum intensity measurements of thin film b
y ARXPS, a method of determination of the thickness of PtSi ultra-thin film
s through calculations of electrom mean free path I is described in this ar
ticle. The result of calculation is in agreement with that of the TEM cryst
al lattice images analysis. It shows that the method is convenient and can
be used to determine the thickness of other ultra-thin films.