Research on the dynamical behaviors of GaAs/AlGaAs heterostructures

We develop the physical model based on the real space charge transfer mecha nism and derive the dynamic equations of GaAs/AlGaAs heterostructures. Comp lex bifurcations are studied in detail for the forced and unforced cases. I t is shown that both periodic attractors and fixed points attractors can co exist under a right de bias. The hysteresis phenomena are also investigated in theory. For the forced GaAs/AlGaAs, numerical simulation shows that the occurance of frequency-locking, quasiperiodicity, and chaos depends on the frequency and amplitude of the externally applied microwave field, as expe cted.