MEASUREMENT OF TRACE IMPURITIES IN HIGH-PURITY MATERIALS

Authors
ZAIDI JH QURESHI IH ARIF M FATIMA I
Citation
Jh. Zaidi et al., MEASUREMENT OF TRACE IMPURITIES IN HIGH-PURITY MATERIALS, Journal of radioanalytical and nuclear chemistry, 191(1), 1995, pp. 75-82
Citations number
20
Journal title
Journal of radioanalytical and nuclear chemistry → ACNP
ISSN journal
02365731
Volume
191
Issue
1
Year of publication
1995
Pages
75 - 82
Database
ISI
SICI code
0236-5731(1995)191:1<75:MOTIIH>2.0.ZU;2-U
Abstract
Neutron activation analysis was used for the determination of 29 trace impurities is high-purity semiconductor grade Ge and Si. In order to determine very low contents of uranium and thorium, Np-239 and Pa-233 activation products were separated using anion exchange and LaF3 copre cipitation methods. The impurity contents were found to be very low, a nd therefore their adverse effects would be negligible.