gamma-ray irradiation effect on hysteresis symmetry and data retention of Pt/SrBi2Ta2O9/Pt thin-film capacitors

The gamma -ray irradiation effect on hysteresis symmetry and data retention of Pt/SrBi2Ta2O9/Pt ferroelectric thin-film capacitors has been investigat ed as a function of irradiation dose. A horizontal shift of polarization-vo ltage curves along the voltage axis, known as imprint, was observed after t he polarized capacitors had been irradiated. The voltage shift increased wi th increasing irradiation dose and increasing remanent polarization written before irradiation. After irradiation, severe data loss was observed after these capacitors had been written to the state opposite to the one stored during irradiation. Possible functional failure due to such a data loss was discussed.