Improved n(+)-GaAs/p(+)-In0.49Ga0.51P/n-GaAs camel-like gate structure forhigh-breakdown, low-leakage, and high-temperature applications

A n(+)-GaAs/p(+)-In0.49Ga0.51P/n-GaAs camel-like gate structure has been ap plied to fabricate high-performance transistors. The studied heterostructur e field-effect transistor exhibits a large barrier height, high breakdown v oltage, low leakage current, and good temperature-dependent characteristics . Experimentally, for a 1x100 mum(2) device, the gate-drain breakdown volta ge and gate leakage current are 52 (31.5) V, and 37 mu A/mm (3.5 mA/mm) at the gate-drain voltage of 40 V, respectively, at the temperature of 300 (48 0) K. In addition, the high drain-source operation voltage over 20 V with l ow leakage current is obtained. (C) 2001 American Institute of Physics.