Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices

Metalorganic remote plasma chemical vapor deposited SiO2/Al2O3 stacks were deposited on 6H p-type silicon SiC to fabricate a high-k gate stack SiC met al-oxide-semiconductor capacitors. Capacitance-voltage (C-V) and current-vo ltage (I-V) measurements were performed. C-V characteristics showed excelle nt properties at room and higher temperatures. Samples exhibited a slight n egative flatband shift from which the net oxide charge (Q(ox)) was calculat ed. Low leakage currents were observed even at high temperatures. I-V chara cteristics of Al2O3 were superior to those observed on AlN and SiO2 dielect rics on SiC. (C) 2001 American Institute of Physics.