AES depth profiling multilayers of 3d transition metals

Citation
S. Baunack et al., AES depth profiling multilayers of 3d transition metals, APPL SURF S, 179(1-4), 2001, pp. 25-29
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
179
Issue
1-4
Year of publication
2001
Pages
25 - 29
Database
ISI
SICI code
0169-4332(20010716)179:1-4<25:ADPMO3>2.0.ZU;2-F
Abstract
Multilayer structures composed of 3d transition metals were investigated by AES in combination with sputter depth profiling. The samples were trilayer s Permalloy/Cu/Permalloy, Co/Cu multilayers and a spin-valve structure. Ove rlapping Auger peaks were separated by a fit-to-spectra of bulk standards. Sample rotation during sputtering improves the depth resolution and made de tection of unintentionally deposited Cu possible. For very thin films the depth profiles are influenced by measuring effects. The effects of atomic mixing, surface roughness and information depth onto the depth profiles in the spin-valve structure were simulated using the MR I model. (C) 2001 Elsevier Science B.V. All rights reserved.