In situ characterization of the nitridation of AIII-BV semiconductor surfaces by means of X-ray photoelectron spectroscopy

The effect of low-energy N-2(+) ion beam bombardment on InAs, InP, and InSb surfaces has been studied using in situ X-ray photoelectron spectroscopy. The formation of a nitrided surface layer has been observed for all investi gated AIII-BV semiconductors. Beside the emerging In-N bonds also P-N bonds were detected for InP, whereas for InAs and InSb, there is no evidence for the formation of As-N and Sb-N bonds, respectively. An analysis of the N I s core level peak also reveals the build-in of interstitial nitrogen. A cha nge of the ion beam incidence angle has great influence on the composition of the surface layer as demonstrated for InP. The amount of nitrogen in P-N bonds and of interstitial nitrogen decreases for changing the ion incidenc e to grazing angles. A detailed XPS analysis provides information on the te mporal evolution of the process of nitridation and the thickness of the nit rided surface layer. (C) 2001 Elsevier Science B.V. All rights reserved.