Time-resolved photoluminescence characterisation of thin PTCDA films on Si(100)

Citation
Ay. Kobitski et al., Time-resolved photoluminescence characterisation of thin PTCDA films on Si(100), APPL SURF S, 179(1-4), 2001, pp. 209-212
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
179
Issue
1-4
Year of publication
2001
Pages
209 - 212
Database
ISI
SICI code
0169-4332(20010716)179:1-4<209:TPCOTP>2.0.ZU;2-S
Abstract
3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) thin films on Si(100) substrate are investigated by time-resolved photoluminescence (PL). A sub-b and structure together with a bi-exponential decay of the PL spectra have b een observed which are attributed to excimer and monomer recombination proc esses. A comparison with single PTCDA crystals shows that the excimer trans ition is related to the crystallinity of the PTCDA films. The dependence of the photoluminescence intensity and decay times on the film thickness and on the substrate temperature give further information about the crystallini ty of PTCDA films. (C) 2001 Elsevier Science B.V. All rights reserved.