ADSORPTION OF GROUP-V ELEMENTS ON III-V(110) SURFACES

Adsorption of group-V elements on III-V (110) surfaces has led to one of the most extensively investigated overlayer systems. Sb and Bi grow epitaxially on the (110) surfaces of several III-V semiconductors and show in general a (1 x 1) symmetry for one adsorbed monolayer. The re sulting interfaces are atomically sharp and therefore suitable model s ystems for experimental and theoretical studies of the Schottky barrie r formation. In this paper we discuss the present stage of understandi ng of group-V covered III-V (110) surfaces. We provide a review of exp erimental techniques and results, and theoretical approaches applied t o these systems. In particular state-of-the-art calculations based on density-functional theory are used to develop a comprehensive picture of the atomic structure, electronic states, vibrational properties, an d their accompanying chemical trends. Different stages of the interfac e formation, from submonolayer coverages to thick overlayers, are cons idered.