MORE PROGRESSIVE TECHNOLOGY OF GASB SINGLE-CRYSTAL GROWTH

GaSb single crystals were grown by the Czochralski method without enca psulant in an atmosphere of ionized hydrogen. It has been found that t he resistivity increased by more than one order of magnitude (0.8-1.0 Omega cm) and free carrier concentration decreased to the value of (1- 2) x 10(16) cm(-3) in comparison with the crystals grown under molecul ar hydrogen atmosphere. A certain asymmetry in acceptor and donor pass ivation is assumed because the Hall concentration does not vary along the direction of crystal growth. Donors are passivated more than accep ters, which should be confirmed by increasing resistivity and decreasi ng mobility.