Jh. Kim et al., Improved microwave and noise performances of InGaP/In-0.33 a(0.67)As p-HEMT grown on patterned GaAs substrate, ELECTR LETT, 37(15), 2001, pp. 981-983
Microwave and noise performances of a highly strained InGa-P/In0.33Ga0.67As
pseudomorphic high electron mobility transistor (p-HEMT) grown on a patter
ned GaAs substrate and a conventional InGaP/In0.22Ga0.78As p-HEMT grown on
a non-patterned GaAs substrate Were compared. The highly strained InGaP/In0
.33Ga0.67As p-HEMT grown on the patterned GaAs substrates showed substantia
l improvements in DC (drain saturation current and transconductance), micro
wave (f(T) and f(max)), and low-frequency and high-frequency noise performa
nces compared With those of the conventional InGaP/In0.22Ga0.78As p-HEMT gr
own on the non-patterned GaAs substrate.