Improved microwave and noise performances of InGaP/In-0.33 a(0.67)As p-HEMT grown on patterned GaAs substrate

Microwave and noise performances of a highly strained InGa-P/In0.33Ga0.67As pseudomorphic high electron mobility transistor (p-HEMT) grown on a patter ned GaAs substrate and a conventional InGaP/In0.22Ga0.78As p-HEMT grown on a non-patterned GaAs substrate Were compared. The highly strained InGaP/In0 .33Ga0.67As p-HEMT grown on the patterned GaAs substrates showed substantia l improvements in DC (drain saturation current and transconductance), micro wave (f(T) and f(max)), and low-frequency and high-frequency noise performa nces compared With those of the conventional InGaP/In0.22Ga0.78As p-HEMT gr own on the non-patterned GaAs substrate.