Global and local stability of circuits containing MOS transistors

The paper deals with nonlinear dynamic circuits containing MOS transistors. The problem of global and local stability of a class of these circuits is considered in detail. It is shown that any circuit belonging to this class is Lagrange stable. In a special case where no independent sources act in t he circuit, it is proved that the origin is the only equilibrium point and the circuit is globally asymptotically stable. Special attention has been p aid to the circuits driven by do sources, having multiple equilibrium point s. A simple tool for proving asymptotic stability of equilibrium points is developed and illustrated by numerical examples.