A deterministic nonlinear-capacitor model for single-electron tunneling junctions

Single-electron tunneling junctions (SETJs) have intriguing properties whic h make them a primary nanoelectronic device for highly compact, fast, and l ow-power circuits. However, standard models for SETJs are based on a quantu m mechanical approach which is very impractical for the analysis and design of SETJ-based circuitry, where a simple, preferably deterministic model is a prerequisite. We verify by physics-based Monte Carlo simulations that th e tunneling junction can in fact be modeled by a piecewise linear voltage-c harge relation, which, from the circuit-theoretic perspective, is a nonline ar capacitor.