Pseudogap in high-T-c cuprates

Citation
B. Bandyopadhyay et A. Poddar, Pseudogap in high-T-c cuprates, J ALLOY COM, 326(1-2), 2001, pp. 137-142
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ALLOYS AND COMPOUNDS
ISSN journal
09258388 → ACNP
Volume
326
Issue
1-2
Year of publication
2001
Pages
137 - 142
Database
ISI
SICI code
0925-8388(20010809)326:1-2<137:PIHC>2.0.ZU;2-W
Abstract
We have studied the variation of the pseudogap through resistivity and ther mopower measurements over a wide range of carrier concentration in Bi-, Tl- and Hg-based high-T-c. systems. In all the three system the signature of a gap in the normal state excitation spectrum has been observed. The gap ope ning temperature (T*) is found to follow a common emperical relation of the form T*=c/p(n) with different c and n values. (C) 2001 Elsevier Science B. V. All rights reserved.