Low field magnetoconductance studies in aggregated Al nano-clusters

Citation
S. Dhara et al., Low field magnetoconductance studies in aggregated Al nano-clusters, J ALLOY COM, 326(1-2), 2001, pp. 284-287
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ALLOYS AND COMPOUNDS
ISSN journal
09258388 → ACNP
Volume
326
Issue
1-2
Year of publication
2001
Pages
284 - 287
Database
ISI
SICI code
0925-8388(20010809)326:1-2<284:LFMSIA>2.0.ZU;2-5
Abstract
Nano-aggregates of Al have been formed by 70 keV He+ irradiation on spin ca st films of aluminum acetyl acetonate. Three fold increase in conductivity was observed for a fluence, range of 1 X 10(16) -5 X 10(17) ions/cm(2). Ele ctrical transport of the charge carriers was observed to follow Mott's vari able range hopping (VRH) mechanism in 3D nano-aggregates of Al in the tempe rature regime of 110-300 gr K. Low field (less than or equal to1 T) magneto resistance (MR) studies in these samples showed change in sign of MR from p ositive for a sample with low zero field resistance [R(H=0)] to negative fo r samples with high R(H=0) owing to quantum interference phenomena of hoppi ng paths. (C) 2001 Elsevier Science B.V. All rights reserved.