Nano-aggregates of Al have been formed by 70 keV He+ irradiation on spin ca
st films of aluminum acetyl acetonate. Three fold increase in conductivity
was observed for a fluence, range of 1 X 10(16) -5 X 10(17) ions/cm(2). Ele
ctrical transport of the charge carriers was observed to follow Mott's vari
able range hopping (VRH) mechanism in 3D nano-aggregates of Al in the tempe
rature regime of 110-300 gr K. Low field (less than or equal to1 T) magneto
resistance (MR) studies in these samples showed change in sign of MR from p
ositive for a sample with low zero field resistance [R(H=0)] to negative fo
r samples with high R(H=0) owing to quantum interference phenomena of hoppi
ng paths. (C) 2001 Elsevier Science B.V. All rights reserved.