Growth of doped lanthanum manganite thin films on CeO2 buffer layer and their properties

Authors
Shmatok, A Mukovskii, Y Marchenko, V Bdikin, I Vasiliev, A
Citation
A. Shmatok et al., Growth of doped lanthanum manganite thin films on CeO2 buffer layer and their properties, J ALLOY COM, 326(1-2), 2001, pp. 303-308
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ALLOYS AND COMPOUNDS
ISSN journal
09258388 → ACNP
Volume
326
Issue
1-2
Year of publication
2001
Pages
303 - 308
Database
ISI
SICI code
0925-8388(20010809)326:1-2<303:GODLMT>2.0.ZU;2-D
Abstract
Epitaxial thin films of doped lanthanum manganites were grown on CeO2 buffe r layer with faced targets (FT) magnetron sputtering technique. TEM, X-ray, AFM, RHEED revealed high quality of obtained films as well as smooth surfa ce and a perfect film-buffer interface. The film properties were found to b e dependent on the buffer layer treatment history. In order to compare obta ined films with those grown directly on single crystalline substrates, we t ested ones deposited on (001)NdGaO3. (C) 2001 Elsevier Science BY All right s reserved.