Application of the single-scan calorimetric technique to the crystallization of the semiconducting Sb(0.16)AS(0.29)Se(0.55) alloy

A procedure has been considered for analyzing the chang with time of the vo lume fraction crystallized and for ge calculating the kinetic parameters (a ctivation energy, kinetic exponent and frequency factor) of non-isothermal reactions in materials involving formation and growth of nuclei. By using t he assumptions of extended volume and random nucleation, a particular expre ssion of the fraction crystallized as a function of time has been derived i n isothermal crystallization processes. The application of the crystallizat ion rate equation to the non-isothermal processes has been carried out, and the kinetic parameters have been deduced by using the calorimetric techniq ues of data analysis of single-scan and multiple-scan. The theoretical meth od considered has been applied to the crystallization kinetics of the semic onducting alloy Sb0.16As0.29Se0.55. The agreement between the kinetic param eters obtained according to both techniques confirms the reliability and ac curacy of the single-scan technique when calculating the above-mentioned pa rameters in non-isothermal crystallization processes. (C) 2001 Elsevier Sci ence B.V. All rights reserved.