The experimental results on time degradation of radiation-induced darkening
effects in vitreous chalcogenide semiconductors of ternary stoichiometric
(AS(2)S(3))(y)(GeS2)(1-y) (y: 0.1, 0.2, 0.4, 0.6) and non-stoichiometric (A
s2S3)(x) (Ge2S3)(1-x) (x: 0.1, 0.2, 0.4, 0.8) systems with a variation of t
he average co-ordination number, Z, are discussed. It is established that a
dequate model for the quantitative description of these effects can be deve
loped at the basis of bimolecular relaxation function (RF) proper to annihi
lation of specific structural defects in the form of oppositively charged a
toms with various co-ordinations. The observed features of the investigated
dynamic radiation-optical changes in these glasses are explained by compos
itional dependences of their atomic compactness, as well as covalent bond s
tatistics. (C) 2001 Published by Elsevier Science B.V.