We present a content-addressable memory whose central component is a superc
onducting crossbar array with 2N elements connected by N-2 junctions. Becau
se multiple pathways exist between any two elements, this storage device is
tolerant to physical defects in the interconnections. Furthermore, each pa
ttern of N bits is stored non-locally in the N-2 junctions, so information
access and retrieval are tolerant to input errors. This superconducting mem
ory should exhibit picosecond single-bit acquisition times with negligible
energy dissipation during switching and multiple non-destructive read-outs
of the stored data.