Crystal structure and temperature dependence of magnetic susceptibility and
electrical resistivity have been determined for GdTiSi and GdTiGe. Both co
mpounds order ferromagnetically and for GdTiGe T-C is 374 K which is a very
high value for such kinds of compounds. The electronic structure for both
compounds has been investigated by photoelectron spectroscopy and compared
with calculations performed using the TB-LMTO method. A very good agreement
with experiment was obtained, especially for GdTiGe. A strong hybrydizatio
n between the d states from Gd and Ti was found and a significant polarizat
ion of the Ti 3d electrons in GdTiGe was obtained which may be related to t
he enhanced indirect exchange between Gd magnetic moments.