Depth profile and annealing behavior study of 350 keV Bi+ ions implanted into LiNbO3

The optically polished LiNbO3 samples were implanted with bismuth ions at 3 50 keV at different doses ranging from 3 x 10(15) to 3 x 10(16) Bi+ cm(-2). Samples implanted with a nominal dose of I x 10(16) ions cm(-2) were subse quently annealed at 600 and 800 degreesC in ambient air, respectively. The distribution of Bi+ ions in LiNbO3 was investigated by Rutherford backscatt ering spectrometry (RBS) of MeV He+ ions. The diffusion of the implanted Bi + and recrystallization of Bi-implanted LiNbO3 have also been studied at 60 0 and 800 degreesC by RBS/channeling technique. In the present work it was found that the range profiles of implanted Bi+ ions were independent of the implanting doses. After 800 degreesC annealing for 120 min partial recryst allization was observed. The annealing made the peak of Bi+ distribution mo ve towards the surface of the sample. Evaporation was also observed during the thermal treatment. (C) 2001 Elsevier Science B.V. All rights reserved.