Optoelectronic properties of InAs1-xPx semiconducting alloys

The investigation of optoelectronic properties of zineblende, InAs1-xPx, se miconducting alloys by pseudopotential calculations is reported in this pap er. Our scheme employs the local empirical pseudopotential method, and incl udes the disorder effect into the virtual crystal approximation by introduc ing an effective disorder potential. Various quantities such as band lineup , band-gap energies, valence bandwidth, refractive index and optical dielec tric constant for the alloy of interest are calculated. Our results show a reasonable agreement with the available experimental data. Attention has al so been paid to the compositional dependence of these quantities studied. ( C) 2001 Elsevier Science B.V. All rights reserved.