Characterization of p-AgGa0.25In0.75Se2/n-Zn0.35Cd0.65S polycrystalline thin film heterojunctions

Authors
Chandra, GH Hussain, OM Uthanna, S Naidu, BS
Citation
Gh. Chandra et al., Characterization of p-AgGa0.25In0.75Se2/n-Zn0.35Cd0.65S polycrystalline thin film heterojunctions, MAT SCI E B, 86(1), 2001, pp. 60-63
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
86
Issue
1
Year of publication
2001
Pages
60 - 63
Database
ISI
SICI code
0921-5107(20010904)86:1<60:COPPT>2.0.ZU;2-D
Abstract
Polycrystalline thin film p-AgGa0.25In0.75Se2/n-Zn0.35Cd0.65S heterojunctio ns were fabricated and the current density-voltage, capacitance-voltage and spectral response characteristics of the junctions were studied. The heter ojunction was illuminated in the back-wall configuration and an open-circui t voltage of 490 mV, a short-circuit current density of 27 mA cm(-2) and an electrical conversion efficiency of 7.8% have been obtained for a cell wit h an active area of I cm(2) under a solar input of 100 mW cm(-2) (C) 2001 E lsevier Science B.V. All rights reserved.