Temperature effect on electroluminescence spectra of silicon p-n junctionsunder avalanche breakdown condition

The temperature effect on electroluminescence spectra of silicon p-n juncti ons under avalanche breakdown condition is investigated. Two different case s are considered in the framework of the indirect interband recombination m odel including the self absorption effect. The first is when the electric f ield remains constant when the temperature varies, and the second is when, for each temperature, the electric field is modified following the variatio n of the avalanche breakdown voltage versus temperature. It is shown that, with a constant electric field, the electroluminescence intensity increases as observed in experimental measurements, whereas a small and negligible i ncrease of the electroluminescence intensity is obtained with a modified fi eld. (C) 2001 Elsevier Science B.V. All rights reserved.